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| Specification Comparison Vishay Siliconix SI4804BDY vs. Si4804DY Description: Dual N-Channel, 30-V (D-S) MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: SI4804BDY Replaces Si4804DY SI4804BDY--E3 (Lead Free version) Replaces Si4804DY SI4804BDY-T1 Replaces Si4804DY-T1 SI4804BDY-T1--E3 (Lead Free version) Replaces Si4804DY-T1 Summary of Performance: The SI4804BDY is the replacement for the original Si4804DY; both parts perform identically including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD Tj and Tstg RthJA SI4804BDY 30 "20 7.5 6 30 2.3 1.7 2.0 -55 to 150 62.5 Si4804DY 30 "20 7.5 6 20 1.7 2.0 1.3 -55 to 150 62.5 Unit V A W _C _C/W Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) SI4804BDY Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Drain Source On Resistance Forward Transconductance Diode Forward Voltage VGS = 10 V VGS = 10 V VGS = 4.5 V VG(th) IGSS IDSS ID(on) rD ( ) Ds(on) gfs VSD 20 0.017 0.024 19 0.75 1.2 0.022 0.030 0.8 3.0 "100 1 20 0.018 0.024 22 0.8 1.2 0.022 0.030 0.8 "100 1 V nA mA A W S V Si4804DY Max Min Typ Max Unit Symbol Min Typ Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Qg Qgs Qgd Rg 0.5 7 2.9 2.5 1.5 2.6 11 13 2 2.7 NS W 20 nC Switching Turn-On Time Turn-Off Turn Off Time Source-Drain Reverse Recovery Time NS denotes parameter not specified in original data sheet. Document Number: 72893 22-Mar-04 www.vishay.com td(on) tr td(off) tf trr 9 10 19 9 35 15 17 30 15 55 8 10 21 10 40 16 20 40 20 80 ns 1 |
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